Rohm Semiconductor UM6J1NTN

UM6J1NTN Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
UM6J1NTN Models
Current - Continuous Drain (Id) @ 25°C:
200mA
edacadModelUrl:
/en/models/2179725
Configuration:
2 P-Channel (Dual)
Manufacturer:
Rohm Semiconductor
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
21 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
30pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
UMT6
Packaging:
Tape & Reel (TR)
Power - Max:
150mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
UM6J1
ECCN:
EAR99
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is UM6J1NTN. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 1.4ohm @ 200ma, 10v. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. In addition, it is reach unaffected. The continuous current drain at 25°C is 200ma. The product is available in 2 p-channel (dual) configuration. The rohm semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 21 weeks standard lead time. The product's input capacitance at maximum includes 30pf @ 10v. The product is available in surface mount configuration. umt6 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 150mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to um6j1, a base product number of the product. The product is designated with the ear99 code number.

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UMT6 MOS Reliability Test(Reliability Documents)
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Transistor, MOSFET Level 1 MSL(Environmental Information)
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UMT6 Constitution Material List(Environmental Information)
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UM6J1N ESD Data(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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Transistor, MOSFET Flammability(Other Related Documents)
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UMT6 Inner Structure(Other Related Documents)
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UMT6 Part Marking(Other Related Documents)

Reviews

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor UM6J1NTN and the best services all around the world ET11990745. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor UM6J1NTN, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor UM6J1NTN is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at UM6J1NTN. We stock a large inventory containing a wide range of variety ET11990745, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor UM6J1NTN. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11990745 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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Yes. We ship UM6J1NTN Internationally to many countries around the world.