Rohm Semiconductor UT6MA3TCR

UT6MA3TCR Rohm Semiconductor
Rohm Semiconductor

Product Information

Base Part Number:
UT6MA3
Detailed Description:
Mosfet Array N and P-Channel 20V 5A, 5.5A 2W Surface Mount HUML2020L8
Input Capacitance (Ciss) (Max) @ Vds:
460pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
6.5nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 1mA
Drain to Source Voltage (Vdss):
20V
Package / Case:
6-PowerUDFN
Rds On (Max) @ Id, Vgs:
59mOhm @ 5A, 4.5V
Supplier Device Package:
HUML2020L8
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
2W
Current - Continuous Drain (Id) @ 25°C:
5A, 5.5A
Manufacturer:
Rohm Semiconductor
Checking for live stock

This is manufactured by Rohm Semiconductor. The manufacturer part number is UT6MA3TCR. Base Part Number: ut6ma3. It features mosfet array n and p-channel 20v 5a, 5.5a 2w surface mount huml2020l8. The product's input capacitance at maximum includes 460pf @ 10v. The maximum gate charge and given voltages include 6.5nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 1ma. The product has a 20v drain to source voltage. Moreover, the product comes in 6-powerudfn. It has a maximum Rds On and voltage of 59mohm @ 5a, 4.5v. huml2020l8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 2w. The continuous current drain at 25°C is 5a, 5.5a. The rohm semiconductor's product offers user-desired applications.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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HUML2020L8-HF Constitution Material List(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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UT6MA3 ESD Data(Environmental Information)
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HUML2020L8 TR Taping Spec(Datasheets)
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UT6MA3(Datasheets)
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Transistor, MOSFET Flammability(Other Related Documents)
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HUML8 Part Marking(Other Related Documents)
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HUML8D Inner Structure(Other Related Documents)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor UT6MA3TCR and the best services all around the world ET11897237. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor UT6MA3TCR, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor UT6MA3TCR is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at UT6MA3TCR. We stock a large inventory containing a wide range of variety ET11897237, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor UT6MA3TCR. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11897237 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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