Rohm Semiconductor HP8S36TB

HP8S36TB Rohm Semiconductor
Rohm Semiconductor

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Base Part Number:
HP8S36
Detailed Description:
Mosfet Array 2 N-Channel (Half Bridge) 30V 27A, 80A 29W Surface Mount 8-HSOP
Input Capacitance (Ciss) (Max) @ Vds:
6100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
47nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
2.4mOhm @ 32A, 10V
Supplier Device Package:
8-HSOP
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Half Bridge)
Customer Reference:
Power - Max:
29W
Current - Continuous Drain (Id) @ 25°C:
27A, 80A
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is HP8S36TB. It has typical 16 weeks of manufacturer standard lead time. Base Part Number: hp8s36. It features mosfet array 2 n-channel (half bridge) 30v 27a, 80a 29w surface mount 8-hsop. The product's input capacitance at maximum includes 6100pf @ 15v. The maximum gate charge and given voltages include 47nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 2.4mohm @ 32a, 10v. 8-hsop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (half bridge). The maximum power of the product is 29w. The continuous current drain at 25°C is 27a, 80a. The rohm semiconductor's product offers user-desired applications.

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HSMT8 TB Taping Spec(Datasheets)
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Transistor, MOSFET Level 1 MSL(Environmental Information)
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HSOP-AuCuAl-HF Constitution Material List(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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HP8S36 ESD Data(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor HP8S36TB and the best services all around the world ET11425418. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor HP8S36TB, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor HP8S36TB is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at HP8S36TB. We stock a large inventory containing a wide range of variety ET11425418, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor HP8S36TB. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11425418 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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