Rohm Semiconductor UM6K1NTN

UM6K1NTN Rohm Semiconductor
UM6K1NTN
Rohm Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
*K1
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 100mA 150mW Surface Mount UMT6
Input Capacitance (Ciss) (Max) @ Vds:
13pF @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 100µA
Drain to Source Voltage (Vdss):
30V
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
8Ohm @ 10mA, 4V
Supplier Device Package:
UMT6
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
150mW
Current - Continuous Drain (Id) @ 25°C:
100mA
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is UM6K1NTN. The FET features of the product include logic level gate. Base Part Number: *k1. It features mosfet array 2 n-channel (dual) 30v 100ma 150mw surface mount umt6. The product's input capacitance at maximum includes 13pf @ 5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 100µa. The product has a 30v drain to source voltage. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 8ohm @ 10ma, 4v. umt6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 150mw. The continuous current drain at 25°C is 100ma. The rohm semiconductor's product offers user-desired applications.

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UM6K1N(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor UM6K1NTN and the best services all around the world ET11368038. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor UM6K1NTN, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor UM6K1NTN is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at UM6K1NTN. We stock a large inventory containing a wide range of variety ET11368038, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor UM6K1NTN. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11368038 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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