Rohm Semiconductor TT8J11TCR

TT8J11TCR Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
Logic Level Gate, 1.5V Drive
Base Part Number:
TT8J11
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 12V 3.5A 650mW Surface Mount 8-TSST
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Drain to Source Voltage (Vdss):
12V
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
43mOhm @ 3.5A, 4.5V
Supplier Device Package:
8-TSST
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
650mW
Current - Continuous Drain (Id) @ 25°C:
3.5A
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is TT8J11TCR. The FET features of the product include logic level gate, 1.5v drive. Base Part Number: tt8j11. It features mosfet array 2 p-channel (dual) 12v 3.5a 650mw surface mount 8-tsst. The product's input capacitance at maximum includes 2600pf @ 6v. The maximum gate charge and given voltages include 22nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 12v drain to source voltage. Moreover, the product comes in 8-smd, flat lead. It has a maximum Rds On and voltage of 43mohm @ 3.5a, 4.5v. 8-tsst is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 650mw. The continuous current drain at 25°C is 3.5a. The rohm semiconductor's product offers user-desired applications.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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TSST8-HF Constitution Material List(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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TT8J11(Datasheets)
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TSMT8 TR Taping Spec(Datasheets)
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TSST8 MOS Reliability Test(Other Related Documents)
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TSST8D Inner Structure(Other Related Documents)
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Reviews

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor TT8J11TCR and the best services all around the world ET10842093. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor TT8J11TCR, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor TT8J11TCR is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at TT8J11TCR. We stock a large inventory containing a wide range of variety ET10842093, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor TT8J11TCR. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET10842093 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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