ON Semiconductor MJD122T4

ON Semiconductor

Product Information

Base Part Number:
MJD12
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz 20W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 4A, 4V
Transistor Type:
NPN - Darlington
Frequency - Transition:
4MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
2V @ 15mA, 4A
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
20W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
10µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJD122T4. Base Part Number: mjd12. It features bipolar (bjt) transistor npn - darlington 100v 8a 4mhz 20w surface mount dpak. Furthermore, 1000 @ 4a, 4v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The transition frequency of the product is 4mhz. The product is available in surface mount configuration. The 2v @ 15ma, 4a is the maximum Vce saturation. dpak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, cut tape (ct) is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 20w. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector current includes 8a. In addition, 10µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Multiple Devices 07/Jul/2010(PCN Obsolescence/ EOL)
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MJD122/127, NJVMJD122/127(Datasheets)

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