ON Semiconductor BD434S

BD434S ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
18 Weeks
Base Part Number:
BD434
Detailed Description:
Bipolar (BJT) Transistor PNP 22V 4A 3MHz 36W Through Hole TO-126-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 10mA, 5V
Transistor Type:
PNP
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 200mA, 2A
Supplier Device Package:
TO-126-3
Voltage - Collector Emitter Breakdown (Max):
22V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
36W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is BD434S. It has typical 18 weeks of manufacturer standard lead time. Base Part Number: bd434. It features bipolar (bjt) transistor pnp 22v 4a 3mhz 36w through hole to-126-3. Furthermore, 40 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 3mhz. The product is available in through hole configuration. The 500mv @ 200ma, 2a is the maximum Vce saturation. to-126-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 22v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 36w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 4a. In addition, 100µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Dev Assembly Chgs 17/Nov/2020(PCN Assembly/Origin)
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BD434/436/438(Datasheets)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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FAQs

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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