Minimum DC Current Gain:
10
Transistor Type:
NPN
Dimensions:
6.8 x 2.5 x 6.3mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
15 W
Maximum Collector Emitter Saturation Voltage:
1.2 V
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Height:
6.3mm
Width:
2.5mm
Length:
6.8mm
Package Type:
TO-251
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
3 A
HTSUS:
0000.00.0000
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 3A, 4V
Frequency - Transition:
3MHz
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 375mA, 3A
REACH Status:
REACH Affected
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
50µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
I-PAK
Power - Max:
1.56 W
Base Product Number:
MJD31
ECCN:
EAR99
