ON Semiconductor 2N5190G

2N5190G ON Semiconductor
2N5190G
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
2N5190
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 4A 2MHz 40W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 1.5A, 2V
Transistor Type:
NPN
Frequency - Transition:
2MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.4V @ 1A, 4A
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is 2N5190G. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: 2n5190. It features bipolar (bjt) transistor npn 40v 4a 2mhz 40w through hole to-225aa. Furthermore, 25 @ 1.5a, 2v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 2mhz. The product is available in through hole configuration. The 1.4v @ 1a, 4a is the maximum Vce saturation. to-225aa is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 40w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 4a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Assembly Change 28/Dec/2020(PCN Assembly/Origin)
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2N5190, 91, 92(Datasheets)

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