ON Semiconductor MJD200T4G

MJD200T4G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
51 Weeks
Base Part Number:
MJD200
Detailed Description:
Bipolar (BJT) Transistor NPN 25V 5A 65MHz 1.4W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
45 @ 2A, 1V
Transistor Type:
NPN
Frequency - Transition:
65MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.8V @ 1A, 5A
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
25V
Packaging:
Cut Tape (CT)
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.4W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJD200T4G. It has typical 51 weeks of manufacturer standard lead time. Base Part Number: mjd200. It features bipolar (bjt) transistor npn 25v 5a 65mhz 1.4w surface mount dpak. Furthermore, 45 @ 2a, 1v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 65mhz. The product is available in surface mount configuration. The 1.8v @ 1a, 5a is the maximum Vce saturation. dpak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 25v. In addition, cut tape (ct) is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.4w. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector current includes 5a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Devices 28/Aug/2017(PCN Assembly/Origin)
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MJD200, MJD210(Datasheets)

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Yes. We ship MJD200T4G Internationally to many countries around the world.