ON Semiconductor MJE3439G

MJE3439G ON Semiconductor
MJE3439G
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MJE3439
Detailed Description:
Bipolar (BJT) Transistor NPN 350V 300mA 15MHz 15W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 20mA, 10V
Transistor Type:
NPN
Frequency - Transition:
15MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 4mA, 50mA
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
350V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
15W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
300mA
Current - Collector Cutoff (Max):
20µA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is MJE3439G. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: mje3439. It features bipolar (bjt) transistor npn 350v 300ma 15mhz 15w through hole to-225aa. Furthermore, 15 @ 20ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 15mhz. The product is available in through hole configuration. The 500mv @ 4ma, 50ma is the maximum Vce saturation. to-225aa is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 350v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 15w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 300ma. In addition, 20µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Assembly Change 28/Dec/2020(PCN Assembly/Origin)
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MJE3439(Datasheets)

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FAQs

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