ON Semiconductor NSS1C300ET4G

NSS1C300ET4G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
21 Weeks
Base Part Number:
NSS1C300
Detailed Description:
Bipolar (BJT) Transistor PNP 100V 3A 100MHz 2.1W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1A, 2V
Transistor Type:
PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
400mV @ 300mA, 3A
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
2.1W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NSS1C300ET4G. It has typical 21 weeks of manufacturer standard lead time. Base Part Number: nss1c300. It features bipolar (bjt) transistor pnp 100v 3a 100mhz 2.1w surface mount dpak. Furthermore, 120 @ 1a, 2v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 100mhz. The product is available in surface mount configuration. The 400mv @ 300ma, 3a is the maximum Vce saturation. dpak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, cut tape (ct) is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2.1w. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector current includes 3a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Mult Devices 29/Aug/2017(PCN Assembly/Origin)
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NSS1C300ET4G(Datasheets)

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