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Toshiba Semiconductor and Storage RN1408,LF(B

RN1408-LF-B Toshiba Semiconductor and Storage RN1408,LF(B
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
22 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Transistor Type:
NPN - Pre-Biased
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Standard Package:
1
Supplier Device Package:
S-Mini
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
47 kOhms
Power - Max:
200mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Other Names:
RN1408(TE85LF)CT RN1408(TE85LF)CT-ND RN1408LF(BCT RN1408LFCT RN1408LFCT-ND
Manufacturer:
Toshiba Semiconductor and Storage
RoHs Compliant
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1408,LF(B. Resistor - Base - 22 kohms. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 100ma 250mhz 200mw surface mount s-mini. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The transition frequency of the product is 250mhz. The product is available in surface mount configuration. The 300mv @ 250µa, 5ma is the maximum Vce saturation. It is available in the standard package of 1. s-mini is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 47 kohms. The maximum power of the product is 200mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. Alternative Names include rn1408(te85lf)ct rn1408(te85lf)ct-nd rn1408lf(bct rn1408lfct rn1408lfct-nd. The toshiba semiconductor and storage's product offers user-desired applications.

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FAQs

Yes. You can also search RN1408,LF(B on website for other similar products.
We accept all major payment methods for all products including ET11415160. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with RN1408,LF(B directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage RN1408,LF(B. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage RN1408,LF(B.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11415160 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11415160.
Yes. We ship RN1408,LF(B Internationally to many countries around the world.
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