ON Semiconductor MPS3563G
Product Information
Base Part Number:
MPS356
Detailed Description:
RF Transistor NPN 12V 50mA 1.5GHz 350W Through Hole TO-92
Noise Figure (dB Typ @ f):
6.5dB @ 60MHz
Transistor Type:
NPN
Frequency - Transition:
1.5GHz
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
50mA
Customer Reference:
Supplier Device Package:
TO-92
Voltage - Collector Emitter Breakdown (Max):
12V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
350W
Gain:
14dB @ 200MHz
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 8mA, 10V
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - RF category are shipped in lowest possible time.
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Yes. We ship MPS3563G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is MPS3563G. Base Part Number: mps356. It features rf transistor npn 12v 50ma 1.5ghz 350w through hole to-92. It has given noise figure of 6.5db @ 60mhz at given frequency. The transistor is a npn type. The transition frequency of the product is 1.5ghz. The product is available in through hole configuration. The maximum collector current includes 50ma. to-92 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 12v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 350w. The 14db @ 200mhz is the gain value of a bespoke product. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). Furthermore, 20 @ 8ma, 10v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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