ON Semiconductor KSP10BU
Product Information
Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Maximum Collector Emitter Saturation Voltage:
0.5 V
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
25 V
Maximum Emitter Base Voltage:
3 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
50 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
39 Weeks
Base Part Number:
KSP10
Detailed Description:
RF Transistor NPN 25V 650MHz 350mW Through Hole TO-92-3
Transistor Type:
NPN
Frequency - Transition:
650MHz
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
25V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
350mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 4mA, 10V
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in Transistors - Bipolar (BJT) - RF category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor KSP10BU. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor KSP10BU.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14527558 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14527558.
Yes. We ship KSP10BU Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is KSP10BU. The transistor is a npn type. The given dimensions of the product include 4.58 x 3.86 x 4.58mm. The product is available in through hole configuration. Provides up to 1 w maximum power dissipation. The product has a maximum 0.5 v collector emitter saturation voltage . Additionally, it has 30 v maximum collector base voltage. Whereas features a 25 v of collector emitter voltage (max). It features a 3 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 50 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 39 weeks of manufacturer standard lead time. Base Part Number: ksp10. It features rf transistor npn 25v 650mhz 350mw through hole to-92-3. The transition frequency of the product is 650mhz. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 25v. In addition, bulk is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 350mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). Furthermore, 60 @ 4ma, 10v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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