ON Semiconductor 2N5770_D75Z
Product Information
Base Part Number:
2N5770
Detailed Description:
RF Transistor NPN 15V 50mA 350mW Through Hole TO-92-3
Noise Figure (dB Typ @ f):
6dB @ 60MHz
Transistor Type:
NPN
Mounting Type:
Through Hole
Current - Collector (Ic) (Max):
50mA
Customer Reference:
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
15V
Packaging:
Tape & Box (TB)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
350mW
Gain:
15dB
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 8mA, 10V
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in Transistors - Bipolar (BJT) - RF category are shipped in lowest possible time.
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Yes. We ship 2N5770_D75Z Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2N5770_D75Z. Base Part Number: 2n5770. It features rf transistor npn 15v 50ma 350mw through hole to-92-3. It has given noise figure of 6db @ 60mhz at given frequency. The transistor is a npn type. The product is available in through hole configuration. The maximum collector current includes 50ma. to-92-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 15v. In addition, tape & box (tb) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 350mw. The 15db is the gain value of a bespoke product. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) (formed leads). Furthermore, 50 @ 8ma, 10v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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