ON Semiconductor 55GN01MA-TL-E
Product Information
Transistor Type:
NPN
Dimensions:
2 x 2.1 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
400 mW
Maximum Collector Base Voltage:
20 V
Maximum Collector Emitter Voltage:
10 V
Maximum Operating Frequency:
5.5 GHz
Maximum Emitter Base Voltage:
3 V
Package Type:
MCP
Number of Elements per Chip:
1
Maximum DC Collector Current:
70 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
55GN01
Detailed Description:
RF Transistor NPN 10V 70mA 4.5GHz ~ 5.5GHz 400mW Surface Mount 3-MCP
Noise Figure (dB Typ @ f):
1.9dB @ 1GHz
Transistor Type:
NPN
Frequency - Transition:
4.5GHz ~ 5.5GHz
Mounting Type:
Surface Mount
Current - Collector (Ic) (Max):
70mA
Customer Reference:
Supplier Device Package:
3-MCP
Voltage - Collector Emitter Breakdown (Max):
10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
400mW
Gain:
10dB @ 1GHz
Package / Case:
SC-70, SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 5V
Manufacturer:
ON Semiconductor
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Yes. We ship 55GN01MA-TL-E Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 55GN01MA-TL-E. The transistor is a npn type. The given dimensions of the product include 2 x 2.1 x 0.9mm. The product is available in surface mount configuration. Provides up to 400 mw maximum power dissipation. Additionally, it has 20 v maximum collector base voltage. Whereas features a 10 v of collector emitter voltage (max). It carries 5.5 ghz of maximum operating frequency. It features a 3 v of maximum emitter base voltage. The package is a sort of mcp. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 70 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: 55gn01. It features rf transistor npn 10v 70ma 4.5ghz ~ 5.5ghz 400mw surface mount 3-mcp. It has given noise figure of 1.9db @ 1ghz at given frequency. The transition frequency of the product is 4.5ghz ~ 5.5ghz. The maximum collector current includes 70ma. 3-mcp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 10v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 400mw. The 10db @ 1ghz is the gain value of a bespoke product. Moreover, the product comes in sc-70, sot-323. Furthermore, 100 @ 10ma, 5v is the minimum DC current gain at given voltage. The on semiconductor's product offers user-desired applications.
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