Central Semiconductor Corp 2N5109
Product Information
Current - Collector (Ic) (Max):
400mA
Detailed Description:
RF Transistor NPN 20V 400mA 1.2GHz 1W Through Hole TO-39
Noise Figure (dB Typ @ f):
3dB @ 200MHz
Transistor Type:
NPN
Frequency - Transition:
1.2GHz
Mounting Type:
Through Hole
Supplier Device Package:
TO-39
Voltage - Collector Emitter Breakdown (Max):
20V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
1W
Package / Case:
TO-205AD, TO-39-3 Metal Can
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 50mA, 15V
Manufacturer:
Central Semiconductor Corp
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Yes. Our products in Transistors - Bipolar (BJT) - RF category are shipped in lowest possible time.
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Yes. We ship 2N5109 Internationally to many countries around the world.
This is manufactured by Central Semiconductor Corp. The manufacturer part number is 2N5109. The maximum collector current includes 400ma. It features rf transistor npn 20v 400ma 1.2ghz 1w through hole to-39. It has given noise figure of 3db @ 200mhz at given frequency. The transistor is a npn type. The transition frequency of the product is 1.2ghz. The product is available in through hole configuration. to-39 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 20v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 1w. Moreover, the product comes in to-205ad, to-39-3 metal can. Furthermore, 40 @ 50ma, 15v is the minimum DC current gain at given voltage. The central semiconductor corp's product offers user-desired applications.
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