Central Semiconductor Corp MPQ2907A
Product Information
Manufacturer Standard Lead Time:
34 Weeks
Current - Collector (Ic) (Max):
600mA
Detailed Description:
Bipolar (BJT) Transistor Array 4 PNP (Quad) 60V 600mA 200MHz 650mW Through Hole TO-116
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 300mA, 10V
Transistor Type:
4 PNP (Quad)
Frequency - Transition:
200MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 30mA, 300mA
Supplier Device Package:
TO-116
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
650mW
Package / Case:
14-DIP (0.300", 7.62mm)
Current - Collector Cutoff (Max):
50nA (ICBO)
Manufacturer:
Central Semiconductor Corp
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FAQs
Yes. You can also search MPQ2907A on website for other similar products.
We accept all major payment methods for all products including ET12088248. Please check your shopping cart at the time of order.
You can order Central Semiconductor Corp brand products with MPQ2907A directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Central Semiconductor Corp MPQ2907A. You can also check on our website or by contacting our customer support team for further order details on Central Semiconductor Corp MPQ2907A.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12088248 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Central Semiconductor Corp" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12088248.
Yes. We ship MPQ2907A Internationally to many countries around the world.
This is manufactured by Central Semiconductor Corp. The manufacturer part number is MPQ2907A. It has typical 34 weeks of manufacturer standard lead time. The maximum collector current includes 600ma. It features bipolar (bjt) transistor array 4 pnp (quad) 60v 600ma 200mhz 650mw through hole to-116. Furthermore, 50 @ 300ma, 10v is the minimum DC current gain at given voltage. The transistor is a 4 pnp (quad) type. The transition frequency of the product is 200mhz. The product is available in through hole configuration. The 1.6v @ 30ma, 300ma is the maximum Vce saturation. to-116 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 650mw. Moreover, the product comes in 14-dip (0.300", 7.62mm). In addition, 50na (icbo) is the maximum current at collector cutoff. The central semiconductor corp's product offers user-desired applications.
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