Toshiba Semiconductor and Storage RN2967(TE85L,F)
Product Information
Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
RN2967
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Transistor Type:
2 PNP - Pre-Biased (Dual)
Frequency - Transition:
200MHz
Mounting Type:
Surface Mount
Resistor - Base (R1):
10kOhms
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Supplier Device Package:
US6
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
47kOhms
Power - Max:
200mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
Toshiba Semiconductor and Storage
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FAQs
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You can order Toshiba Semiconductor and Storage brand products with RN2967(TE85L,F) directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Bipolar Transistor Arrays, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage RN2967(TE85L,F). You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage RN2967(TE85L,F).
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11853021 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11853021.
Yes. We ship RN2967(TE85L,F) Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2967(TE85L,F). It has typical 12 weeks of manufacturer standard lead time. Base Part Number: rn2967. It features pre-biased bipolar transistor (bjt) 2 pnp - pre-biased (dual) 50v 100ma 200mhz 200mw surface mount us6. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 pnp - pre-biased (dual) type. The transition frequency of the product is 200mhz. The product is available in surface mount configuration. Resistor - Base - 10kohms. The 300mv @ 250µa, 5ma is the maximum Vce saturation. us6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 47kohms. The maximum power of the product is 200mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
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