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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2967(TE85L,F). It has typical 12 weeks of manufacturer standard lead time. Base Part Number: rn2967. It features pre-biased bipolar transistor (bjt) 2 pnp - pre-biased (dual) 50v 100ma 200mhz 200mw surface mount us6. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 pnp - pre-biased (dual) type. The transition frequency of the product is 200mhz. The product is available in surface mount configuration. Resistor - Base - 10kohms. The 300mv @ 250µa, 5ma is the maximum Vce saturation. us6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 47kohms. The maximum power of the product is 200mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
For more information please check the datasheets.
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