Manufacturer Standard Lead Time:
13 Weeks
Base Part Number:
*MD29
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 12V 100mA, 500mA 250MHz, 260MHz 120mW Surface Mount EMT6
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 5mA, 5V / 140 @ 100mA, 2V
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Frequency - Transition:
250MHz, 260MHz
Mounting Type:
Surface Mount
Resistor - Base (R1):
1kOhms, 10kOhms
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA
Supplier Device Package:
EMT6
Voltage - Collector Emitter Breakdown (Max):
50V, 12V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
10kOhms
Power - Max:
120mW
Customer Reference:
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA, 500mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
Rohm Semiconductor