N-Channel MOSFET, 30 A, 1200 V, 7-Pin D2PAK-7L ON Semiconductor NTBG080N120SC1
Product Information
Maximum Drain Source Voltage:
1200 V
Maximum Continuous Drain Current:
30 A
Mounting Type:
Surface Mount
Transistor Material:
Si
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
110 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Channel Type:
N
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.3V @ 5mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
110mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 20 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25, -15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
179W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1154 pF @ 800 V
standardLeadTime:
17 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK-7
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
NTBG080
ECCN:
EAR99
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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This is N-Channel MOSFET 30 A 1200 V 7-Pin D2PAK-7L ON Semiconductor manufactured by onsemi. The manufacturer part number is NTBG080N120SC1. It has a maximum of 1200 v drain source voltage. While 30 a of maximum continuous drain current. The product is available in surface mount configuration. The transistor is manufactured from highly durable si material. The product carries 4.3v of maximum gate threshold voltage. It provides up to 110 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. The product is available in [Cannel Type] channel. It contains 7 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.3v @ 5ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d2pak (7 leads + tab), to-263ca. It has a maximum Rds On and voltage of 110mohm @ 20a, 20v. The maximum gate charge and given voltages include 56 nc @ 20 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tape & reel (tr) package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25, -15v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 179w (tc). The product's input capacitance at maximum includes 1154 pf @ 800 v. It has a long 17 weeks standard lead time. d2pak-7 is the supplier device package value. The continuous current drain at 25°C is 30a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to ntbg080, a base product number of the product. The product is designated with the ear99 code number.
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