Renesas NP160N055TUJ-E1-AY
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
175°C
Package / Case:
TO-263-7, D2PAK (6 Leads + Tab)
Gate Charge (Qg) (Max) @ Vgs:
180 nC @ 10 V
RoHS Status:
RoHS non-compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
3mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
10350 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263-7
Current - Continuous Drain (Id) @ 25°C:
160A (Tc)
Power Dissipation (Max):
1.8W (Ta), 250W (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship NP160N055TUJ-E1-AY Internationally to many countries around the world.
This is manufactured by Renesas. The manufacturer part number is NP160N055TUJ-E1-AY. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has 175°c operating temperature range. Moreover, the product comes in to-263-7, d2pak (6 leads + tab). The maximum gate charge and given voltages include 180 nc @ 10 v. The product is rohs non-compliant. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 3mohm @ 80a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 55 v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 10350 pf @ 25 v. The product is available in surface mount configuration. to-263-7 is the supplier device package value. The continuous current drain at 25°C is 160a (tc). The product carries maximum power dissipation 1.8w (ta), 250w (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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