Forward Voltage Vf:
2.5V
Width:
5.15 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
157nC
Package Type:
Hip-247
Maximum Continuous Drain Current Id:
119A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
24mΩ
Maximum Operating Temperature:
200°C
Maximum Drain Source Voltage Vds:
650V
Channel Type:
Type N
Length:
15.75mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Through Hole
Maximum Power Dissipation Pd:
565W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
18 V
Series:
SCTW90
Height:
20.15mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
25mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs:
157 nC @ 18 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
SCTW90N65G2V Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
edacadModelUrl:
/en/models/9805815
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3300 pF @ 400 V
standardLeadTime:
52 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
HiP247™
Current - Continuous Drain (Id) @ 25°C:
90A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTW90
ECCN:
EAR99
