Toshiba Semiconductor and Storage TTD1409B,S4X
Product Information
Current - Collector (Ic) (Max):
6 A
HTSUS:
8541.29.0095
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
DC Current Gain (hFE) (Min) @ Ic, Vce:
600 @ 2A, 2V
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
2V @ 40mA, 4A
Voltage - Collector Emitter Breakdown (Max):
400 V
Transistor Type:
NPN - Darlington
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Current - Collector Cutoff (Max):
20µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220SIS
Power - Max:
2 W
Base Product Number:
TTD1409
ECCN:
EAR99
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Yes. Our products in Single Bipolar Transistors category are shipped in lowest possible time.
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Yes. We ship TTD1409B,S4X Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TTD1409B,S4X. The maximum collector current includes 6 a. It is assigned with possible HTSUS value of 8541.29.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. Furthermore, 600 @ 2a, 2v is the minimum DC current gain at given voltage. The 2v @ 40ma, 4a is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 400 v. The transistor is a npn - darlington type. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 16 weeks standard lead time. In addition, 20µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-220sis is the supplier device package value. The maximum power of the product is 2 w. Moreover, it corresponds to ttd1409, a base product number of the product. The product is designated with the ear99 code number.
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