onsemi MMBT5551LT1H

MMBT5551LT1H onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
600 mA
HTSUS:
8541.21.0095
RoHS Status:
Not applicable
Voltage - Collector Emitter Breakdown (Max):
160 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
edacadModel:
MMBT5551LT1H Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
200mV @ 5mA, 50mA
REACH Status:
Vendor Undefined
edacadModelUrl:
/en/models/12135662
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Power - Max:
225 mW
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is MMBT5551LT1H. The maximum collector current includes 600 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is not applicable. The maximum collector emitter breakdown voltage of the product is 160 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The 200mv @ 5ma, 50ma is the maximum Vce saturation. In addition, it is vendor undefined. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-23-3 (to-236) is the supplier device package value. The maximum power of the product is 225 mw. The product is designated with the ear99 code number.

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