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This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS5612PA,115. The maximum collector current includes 6 a. The maximum collector emitter breakdown voltage of the product is 12 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-powerudfn. Furthermore, 190 @ 2a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 60mhz. The 300mv @ 300ma, 6a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na is the maximum current at collector cutoff. The product is available in surface mount configuration. 3-huson (2x2) is the supplier device package value. The maximum power of the product is 2.1 w.
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