NXP Semiconductors PBSS5112PAP,115
Product Information
Current - Collector (Ic) (Max):
1A
Voltage - Collector Emitter Breakdown (Max):
120V
Operating Temperature:
150°C (TJ)
Package / Case:
6-UDFN Exposed Pad
DC Current Gain (hFE) (Min) @ Ic, Vce:
190 @ 100mA, 2V
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
480mV @ 100mA, 1A
REACH Status:
REACH Unaffected
Transistor Type:
2 PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
6-HUSON (2x2)
Power - Max:
510mW
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FAQs
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Yes. We ship PBSS5112PAP,115 Internationally to many countries around the world.
This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS5112PAP,115. The maximum collector current includes 1a. The maximum collector emitter breakdown voltage of the product is 120v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-udfn exposed pad. Furthermore, 190 @ 100ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 480mv @ 100ma, 1a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a 2 pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. 6-huson (2x2) is the supplier device package value. The maximum power of the product is 510mw.
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