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NXP Semiconductors PBHV8115T,215

PBHV8115T-215 NXP Semiconductors PBHV8115T,215
NXP Semiconductors

Product Information

Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
150 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 500mA, 10V
Frequency - Transition:
30MHz
Vce Saturation (Max) @ Ib, Ic:
350mV @ 200mA, 1A
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-236AB
Power - Max:
300 mW
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This is manufactured by NXP Semiconductors. The manufacturer part number is PBHV8115T,215. The maximum collector current includes 1 a. The maximum collector emitter breakdown voltage of the product is 150 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 50 @ 500ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. The 350mv @ 200ma, 1a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na is the maximum current at collector cutoff. The product is available in surface mount configuration. to-236ab is the supplier device package value. The maximum power of the product is 300 mw.

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PBHV8115T,215 Datasheet(Datasheets)

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