NXP Semiconductors BSV52,215

BSV52-215 NXP Semiconductors BSV52,215
NXP Semiconductors

Product Information

Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
12 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 10mA, 1V
Frequency - Transition:
500MHz
Vce Saturation (Max) @ Ib, Ic:
400mV @ 5mA, 50mA
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
400nA (ICBO)
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
TO-236AB
Power - Max:
250 mW
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This is manufactured by NXP Semiconductors. The manufacturer part number is BSV52,215. The maximum collector current includes 100 ma. The maximum collector emitter breakdown voltage of the product is 12 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 40 @ 10ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 500mhz. The 400mv @ 5ma, 50ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 400na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. to-236ab is the supplier device package value. The maximum power of the product is 250 mw.

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