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NXP Semiconductors 2PB709BRL,215

2PB709BRL-215 NXP Semiconductors 2PB709BRL,215
NXP Semiconductors

Product Information

Current - Collector (Ic) (Max):
200 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
210 @ 2mA, 10V
Frequency - Transition:
200MHz
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
Current - Collector Cutoff (Max):
10nA (ICBO)
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
TO-236AB
Power - Max:
250 mW
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This is manufactured by NXP Semiconductors. The manufacturer part number is 2PB709BRL,215. The maximum collector current includes 200 ma. The maximum collector emitter breakdown voltage of the product is 50 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 210 @ 2ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The 250mv @ 10ma, 100ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 10na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. to-236ab is the supplier device package value. The maximum power of the product is 250 mw.

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