Toshiba Semiconductor and Storage 2SC4738-GR,LXHF
Product Information
Current - Collector (Ic) (Max):
150 mA
HTSUS:
8541.21.0095
Operating Temperature:
-
Package / Case:
SC-75, SOT-416
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 6V
Frequency - Transition:
80MHz
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Transistor Type:
NPN
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
standardLeadTime:
12 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
SSM
Power - Max:
120 mW
ECCN:
EAR99
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You can order Toshiba Semiconductor and Storage brand products with 2SC4738-GR,LXHF directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single Bipolar Transistors category are shipped in lowest possible time.
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Yes. We ship 2SC4738-GR,LXHF Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC4738-GR,LXHF. The maximum collector current includes 150 ma. It is assigned with possible HTSUS value of 8541.21.0095. Moreover, the product comes in sc-75, sot-416. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. The 250mv @ 10ma, 100ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50 v. The transistor is a npn type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. ssm is the supplier device package value. The maximum power of the product is 120 mw. The product is designated with the ear99 code number.
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