Transistor Type:
NPN
Dimensions:
5.2 x 4.19 x 5.33mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Base Voltage:
50 V
Maximum Collector Emitter Voltage:
50 V
Maximum Operating Frequency:
30 (min) MHz
Maximum Emitter Base Voltage:
50 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
100 mA
HTSUS:
8541.21.0095
Voltage - Collector Emitter Breakdown (Max):
50 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100µA, 5V
Frequency - Transition:
30MHz
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
700mV @ 1mA, 10mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
50nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Packaging:
Cut Tape (CT)
Power - Max:
625 mW
Base Product Number:
2N5210
ECCN:
EAR99
