onsemi MJW18020G NPN Transistor, 30 A, 450 V, 3-Pin TO-247

MJW18020G onsemi  NPN Transistor, 30 A, 450 V, 3-Pin TO-247
MJW18020G
MJW18020G
onsemi

Product Information

Minimum DC Current Gain:
14
Transistor Type:
NPN
Dimensions:
16.26 x 5.3 x 21.08mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
250 W
Maximum Collector Base Voltage:
1000 V dc
Maximum Collector Emitter Voltage:
450 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
9 V
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum DC Collector Current:
30 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
30 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
450 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-247-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
14 @ 3A, 5V
Frequency - Transition:
13MHz
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 4A, 20A
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
100µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Power - Max:
250 W
Base Product Number:
MJW18020
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is NPN Transistor 30 A 450 V 3-Pin TO-247 manufactured by onsemi. The manufacturer part number is MJW18020G. It features up to 14 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 16.26 x 5.3 x 21.08mm. The product is available in through hole configuration. Provides up to 250 w maximum power dissipation. Additionally, it has 1000 v dc maximum collector base voltage. Whereas features a 450 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 9 v of maximum emitter base voltage. The package is a sort of to-247. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 30 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 30 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 450 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. Furthermore, 14 @ 3a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 13mhz. The 1.5v @ 4a, 20a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 14 weeks standard lead time. In addition, 100µa is the maximum current at collector cutoff. to-247-3 is the supplier device package value. The maximum power of the product is 250 w. Moreover, it corresponds to mjw18020, a base product number of the product. The product is designated with the ear99 code number.

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ESD Control Selection Guide V1(Technical Reference)
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MJW18020 NPN Silicon Power Transistors High Voltage Planar(Technical Reference)
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MJW18020(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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FAQs

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