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STMicroelectronics MJD122T4

MJD122T4 STMicroelectronics
MJD122T4
MJD122T4
STMicroelectronics

Product Information

Minimum DC Current Gain:
100
Transistor Type:
NPN
Dimensions:
6.6 x 6.2 x 2.4mm
Mounting Type:
Surface Mount
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
16 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4.5 V
Maximum Collector Cut-off Current:
0.01mA
Height:
2.4mm
Width:
6.2mm
Length:
6.6mm
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
4 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
16 Weeks
Base Part Number:
MJD122
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 8A 20W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 4A, 4V
Transistor Type:
NPN - Darlington
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
4V @ 80mA, 8A
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
20W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
10µA
Manufacturer:
STMicroelectronics
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is MJD122T4. It features up to 100 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 6.6 x 6.2 x 2.4mm. The product is available in surface mount configuration. It features a 5 v of maximum emitter base voltage. The product has a maximum 16 a continuous collector current . Additionally, it has 100 v maximum collector base voltage. Whereas features a 100 v of collector emitter voltage (max). In addition, the product has a maximum 4.5 v base emitter saturation voltage . It has a maximum 0.01ma collector cut-off current . In addition, the height is 2.4mm. Furthermore, the product is 6.2mm wide. Its accurate length is 6.6mm. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The product has a maximum 4 v collector emitter saturation voltage . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 16 weeks of manufacturer standard lead time. Base Part Number: mjd122. It features bipolar (bjt) transistor npn - darlington 100v 8a 20w surface mount dpak. Furthermore, 1000 @ 4a, 4v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The 4v @ 80ma, 8a is the maximum Vce saturation. dpak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 20w. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector current includes 8a. In addition, 10µa is the maximum current at collector cutoff. The stmicroelectronics's product offers user-desired applications.

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MJD122 MJD127 Complementary power Darlington transistors Data Sheet(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
MJD122,MJD127(Datasheets)

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