Toshiba Semiconductor and Storage 2SA1955FVBTPL3Z
Product Information
Current - Collector (Ic) (Max):
400 mA
HTSUS:
8541.21.0075
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-723
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 10mA, 2V
Frequency - Transition:
130MHz
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 200mA
Voltage - Collector Emitter Breakdown (Max):
12 V
Transistor Type:
PNP
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
VESM
Power - Max:
100 mW
Base Product Number:
2SA1955
ECCN:
EAR99
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Yes. Our products in Single Bipolar Transistors category are shipped in lowest possible time.
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Yes. We ship 2SA1955FVBTPL3Z Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1955FVBTPL3Z. The maximum collector current includes 400 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-723. Furthermore, 300 @ 10ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 130mhz. The 250mv @ 10ma, 200ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 12 v. The transistor is a pnp type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. vesm is the supplier device package value. The maximum power of the product is 100 mw. Moreover, it corresponds to 2sa1955, a base product number of the product. The product is designated with the ear99 code number.
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