STMicroelectronics MJD117T4

MJD117T4 STMicroelectronics
MJD117T4
MJD117T4
STMicroelectronics

Product Information

Minimum DC Current Gain:
200
Transistor Type:
PNP
Dimensions:
6.6 x 6.2 x 2.4mm
Mounting Type:
Surface Mount
Maximum Emitter Base Voltage:
5 V
Maximum Continuous Collector Current:
4 A
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4 V
Maximum Collector Cut-off Current:
0.02mA
Height:
2.4mm
Width:
6.2mm
Length:
6.6mm
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
3 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
2 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
100 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 2A, 3V
edacadModel:
MJD117T4 Models
Frequency - Transition:
25MHz
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1038924
Transistor Type:
PNP - Darlington
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
20µA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DPAK
Power - Max:
20 W
Base Product Number:
MJD117
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is MJD117T4. It features up to 200 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 6.6 x 6.2 x 2.4mm. The product is available in surface mount configuration. It features a 5 v of maximum emitter base voltage. The product has a maximum 4 a continuous collector current . Additionally, it has 100 v maximum collector base voltage. Whereas features a 100 v of collector emitter voltage (max). In addition, the product has a maximum 4 v base emitter saturation voltage . It has a maximum 0.02ma collector cut-off current . In addition, the height is 2.4mm. Furthermore, the product is 6.2mm wide. Its accurate length is 6.6mm. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The product has a maximum 3 v collector emitter saturation voltage . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 2 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 100 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Furthermore, 1000 @ 2a, 3v is the minimum DC current gain at given voltage. The transition frequency of the product is 25mhz. The 3v @ 40ma, 4a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp - darlington type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 14 weeks standard lead time. In addition, 20µa is the maximum current at collector cutoff. dpak is the supplier device package value. The maximum power of the product is 20 w. Moreover, it corresponds to mjd117, a base product number of the product. The product is designated with the ear99 code number.

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MJD112, MJD117, Complementary Power Darlington Transistors(Technical Reference)
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MJD112 MJD117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Devices 27/Feb/2019(PCN Assembly/Origin)
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MJD11x(Datasheets)

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