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Toshiba Semiconductor and Storage TTA1943(Q)

TTA1943-Q- Toshiba Semiconductor and Storage TTA1943(Q)
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
15 A
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
230 V
Operating Temperature:
150°C (TJ)
Package / Case:
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 1A, 5V
Frequency - Transition:
REACH Status:
Vendor Undefined
TTA1943(Q) Models
Transistor Type:
Vce Saturation (Max) @ Ib, Ic:
3V @ 800mA, 8A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
15 Weeks
Current - Collector Cutoff (Max):
5µA (ICBO)
Mounting Type:
Through Hole
Supplier Device Package:
Power - Max:
150 W
Base Product Number:
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TTA1943(Q). The maximum collector current includes 15 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 230 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3pl. Furthermore, 80 @ 1a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. In addition, it is vendor undefined. The transistor is a pnp type. The 3v @ 800ma, 8a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 15 weeks standard lead time. In addition, 5µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-3p(l) is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 150 w. Moreover, it corresponds to tta1943, a base product number of the product. The product is designated with the ear99 code number.


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