Toshiba Semiconductor and Storage TBC857B,LM
Product Information
Current - Collector (Ic) (Max):
150 mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
210 @ 2mA, 5V
Frequency - Transition:
80MHz
Vce Saturation (Max) @ Ib, Ic:
650mV @ 100mA, 5mA
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
16 Weeks
Current - Collector Cutoff (Max):
30nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3
Power - Max:
320 mW
Base Product Number:
TBC857
ECCN:
EAR99
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Yes. We ship TBC857B,LM Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TBC857B,LM. The maximum collector current includes 150 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 210 @ 2ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. The 650mv @ 100ma, 5ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 16 weeks standard lead time. In addition, 30na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. sot-23-3 is the supplier device package value. The maximum power of the product is 320 mw. Moreover, it corresponds to tbc857, a base product number of the product. The product is designated with the ear99 code number.
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