Micron Technology Inc. MT53E512M32D1ZW-046 AUT:B

MT53E512M32D1ZW-046-AUT-B Micron Technology Inc. MT53E512M32D1ZW-046 AUT:B
Micron Technology Inc.

Product Information

RoHS Status:
ROHS3 Compliant
DigiKey Programmable:
Not Verified
Memory Interface:
Parallel
Write Cycle Time - Word, Page:
18ns
Operating Temperature:
-40°C ~ 125°C (TC)
Memory Size:
16Gbit
Package / Case:
200-TFBGA
REACH Status:
REACH Unaffected
Memory Organization:
512M x 32
Package:
Box
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Clock Frequency:
2.133 GHz
Qualification:
AEC-Q100
standardLeadTime:
6 Weeks
Access Time:
3.5 ns
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
200-TFBGA (10x14.5)
Memory Type:
Volatile
Voltage - Supply:
1.06V ~ 1.17V
Technology:
SDRAM - Mobile LPDDR4X
Memory Format:
DRAM
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This is manufactured by Micron Technology Inc.. The manufacturer part number is MT53E512M32D1ZW-046 AUT:B. The product is rohs3 compliant. It is a parallel memory interface. It allows a 18ns of write cycle time. The product has -40°c ~ 125°c (tc) operating temperature range. It holds a typical memory size of 16gbit. Moreover, the product comes in 200-tfbga. In addition, it is reach unaffected. While the product's memory is organised as 512m x 32. It is shipped in box package . Its typical moisture sensitivity level is 3 (168 hours). The product boasts a clock frequency of 2.133 ghz. It has a long 6 weeks standard lead time. It allows 3.5 ns access time. The product is available in surface mount configuration. The product is automotive, a grade of class. 200-tfbga (10x14.5) is the supplier device package value. It is a type of volatile memory type. It has optimum voltage supply of 1.06v ~ 1.17v. This product use sdram - mobile lpddr4x technology. It is a sort of dram memory.

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FAQs

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