Toshiba Semiconductor and Storage 2SK209-GR(TE85L,F)

2SK209-GR-TE85L-F- Toshiba Semiconductor and Storage 2SK209-GR(TE85L,F)
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
52 Weeks
Base Part Number:
TC74VHC10
Detailed Description:
N-Channel 10mA (Ta) 150mW (Ta) Surface Mount SC-59
Input Capacitance (Ciss) (Max) @ Vds:
13pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
SC-59
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 125°C (TA)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
150mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
10mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SK209-GR(TE85L,F). It has typical 52 weeks of manufacturer standard lead time. Base Part Number: tc74vhc10. It features n-channel 10ma (ta) 150mw (ta) surface mount sc-59. The product's input capacitance at maximum includes 13pf @ 10v. The product is available in surface mount configuration. sc-59 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 125°c (ta) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 150mw (ta). The continuous current drain at 25°C is 10ma (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.

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