Maximum Drain Source Voltage:
30 V
Configuration:
Single
Dimensions:
2.9 x 1.5 x 1.1mm
Mounting Type:
Surface Mount
Idss Drain-Source Cut-off Current:
1.2 to 3mA
Source Gate On-Capacitance:
1.1pF
Height:
1.1mm
Width:
1.5mm
Length:
2.9mm
Maximum Drain Source Resistance:
200 Ω
Package Type:
CP
Maximum Drain Gate Voltage:
-30V
Drain Gate On-Capacitance:
4pF
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
2SK3666
Detailed Description:
JFET N-Channel 10mA 200mW Surface Mount 3-CP
Input Capacitance (Ciss) (Max) @ Vds:
4pF @ 10V
Mounting Type:
Surface Mount
Current - Drain (Idss) @ Vds (Vgs=0):
1.2mA @ 10V
Drain to Source Voltage (Vdss):
30V
Package / Case:
TO-236-3, SC-59, SOT-23-3
Resistance - RDS(On):
200 Ohms
Voltage - Cutoff (VGS off) @ Id:
180mV @ 1µA
Supplier Device Package:
3-CP
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Power - Max:
200mW
Current Drain (Id) - Max:
10mA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is 2SK3666-3-TB-E. It has a maximum of 30 v drain source voltage. The product is available in single configuration. The given dimensions of the product include 2.9 x 1.5 x 1.1mm. The product is available in surface mount configuration. Moreover, it has 1.2 to 3ma Idss drain source cut-off current . It has 1.1pf source gate On-capacitance . In addition, the height is 1.1mm. Furthermore, the product is 1.5mm wide. Its accurate length is 2.9mm. It provides up to 200 ω maximum drain source resistance. The package is a sort of cp. It has a maximum -30v drain gate voltage . Additionally, it has 4pf drain gate on-capacitance . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: 2sk3666. It features jfet n-channel 10ma 200mw surface mount 3-cp. The product's input capacitance at maximum includes 4pf @ 10v. The product features 1.2ma @ 10v drain current at given volts. The product has a 30v drain to source voltage. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It features 200 ohms RDS (On) resistance. The product features cut off 180mv @ 1µa. 3-cp is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. The maximum power of the product is 200mw. It bears maximum 10ma current drain. The on semiconductor's product offers user-desired applications.
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