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ON Semiconductor 2SK3666-3-TB-E

2SK3666-3-TB-E ON Semiconductor
2SK3666-3-TB-E
2SK3666-3-TB-E
ON Semiconductor

Product Information

Maximum Drain Source Voltage:
30 V
Configuration:
Single
Dimensions:
2.9 x 1.5 x 1.1mm
Mounting Type:
Surface Mount
Idss Drain-Source Cut-off Current:
1.2 to 3mA
Source Gate On-Capacitance:
1.1pF
Height:
1.1mm
Width:
1.5mm
Length:
2.9mm
Maximum Drain Source Resistance:
200 Ω
Package Type:
CP
Maximum Drain Gate Voltage:
-30V
Drain Gate On-Capacitance:
4pF
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
2SK3666
Detailed Description:
JFET N-Channel 10mA 200mW Surface Mount 3-CP
Input Capacitance (Ciss) (Max) @ Vds:
4pF @ 10V
Mounting Type:
Surface Mount
Current - Drain (Idss) @ Vds (Vgs=0):
1.2mA @ 10V
Drain to Source Voltage (Vdss):
30V
Package / Case:
TO-236-3, SC-59, SOT-23-3
Resistance - RDS(On):
200 Ohms
Voltage - Cutoff (VGS off) @ Id:
180mV @ 1µA
Supplier Device Package:
3-CP
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Power - Max:
200mW
Current Drain (Id) - Max:
10mA
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is 2SK3666-3-TB-E. It has a maximum of 30 v drain source voltage. The product is available in single configuration. The given dimensions of the product include 2.9 x 1.5 x 1.1mm. The product is available in surface mount configuration. Moreover, it has 1.2 to 3ma Idss drain source cut-off current . It has 1.1pf source gate On-capacitance . In addition, the height is 1.1mm. Furthermore, the product is 1.5mm wide. Its accurate length is 2.9mm. It provides up to 200 ω maximum drain source resistance. The package is a sort of cp. It has a maximum -30v drain gate voltage . Additionally, it has 4pf drain gate on-capacitance . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: 2sk3666. It features jfet n-channel 10ma 200mw surface mount 3-cp. The product's input capacitance at maximum includes 4pf @ 10v. The product features 1.2ma @ 10v drain current at given volts. The product has a 30v drain to source voltage. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It features 200 ohms RDS (On) resistance. The product features cut off 180mv @ 1µa. 3-cp is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. The maximum power of the product is 200mw. It bears maximum 10ma current drain. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
Mult Dev EOL 7/Apr/2021(PCN Obsolescence/ EOL)
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2SK3666(Datasheets)

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FAQs

Yes. You can also search 2SK3666-3-TB-E on website for other similar products.
We accept all major payment methods for all products including ET11077086. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with 2SK3666-3-TB-E directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in JFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor 2SK3666-3-TB-E. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor 2SK3666-3-TB-E.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11077086 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11077086.
Yes. We ship 2SK3666-3-TB-E Internationally to many countries around the world.