Toshiba Semiconductor and Storage 2SK208-Y(TE85L,F)

2SK208-Y-TE85L-F- Toshiba Semiconductor and Storage 2SK208-Y(TE85L,F)
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
12 Weeks
Base Part Number:
TC74VCX162
Detailed Description:
JFET N-Channel 50V 6.5mA 100mW Surface Mount S-Mini
Input Capacitance (Ciss) (Max) @ Vds:
8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS):
50V
Mounting Type:
Surface Mount
Current - Drain (Idss) @ Vds (Vgs=0):
1.2mA @ 10V
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
S-Mini
Voltage - Cutoff (VGS off) @ Id:
400mV @ 100nA
Packaging:
Cut Tape (CT)
Operating Temperature:
125°C (TJ)
FET Type:
N-Channel
Customer Reference:
Power - Max:
100mW
Current Drain (Id) - Max:
6.5mA
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SK208-Y(TE85L,F). It has typical 12 weeks of manufacturer standard lead time. Base Part Number: tc74vcx162. It features jfet n-channel 50v 6.5ma 100mw surface mount s-mini. The product's input capacitance at maximum includes 8.2pf @ 10v. The breakdown voltage of the product is 50v. The product is available in surface mount configuration. The product features 1.2ma @ 10v drain current at given volts. Moreover, the product comes in to-236-3, sc-59, sot-23-3. s-mini is the supplier device package value. The product features cut off 400mv @ 100na. In addition, cut tape (ct) is the available packaging type of the product. The product has 125°c (tj) operating temperature range. It carries FET type n-channel. The maximum power of the product is 100mw. It bears maximum 6.5ma current drain. The toshiba semiconductor and storage's product offers user-desired applications.

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FAQs

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You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage 2SK208-Y(TE85L,F). You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage 2SK208-Y(TE85L,F).
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