ON Semiconductor NFAM2012L5BT 3 Phase Bridge Smart Power Module, 20 A 1200 V DIP39, Through Hole
Product Information
Mounting Type:
Through Hole
Maximum Collector Emitter Voltage:
1200 V
Number of Transistors:
6
Channel Type:
N
Maximum Continuous Collector Current:
20 A
Maximum Gate Emitter Voltage:
15V
Package Type:
DIP39
Configuration:
3 Phase Bridge
HTSUS:
8542.39.0001
RoHS Status:
ROHS3 Compliant
Current:
20 A
Package / Case:
39-PowerDIP Module (1.413", 35.90mm), 30 Leads
Type:
IGBT
REACH Status:
REACH Unaffected
edacadModel:
NFAM2012L5BT Models
edacadModelUrl:
/en/models/11592801
Configuration:
3 Phase
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
Voltage - Isolation:
2500Vrms
Mounting Type:
Through Hole
Series:
-
Voltage:
1.2 kV
Base Product Number:
NFAM2012
ECCN:
EAR99
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You can order onsemi brand products with NFAM2012L5BT directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Power Driver Modules category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NFAM2012L5BT 3 Phase Bridge Smart Power Module, 20 A 1200 V DIP39, Through Hole. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NFAM2012L5BT 3 Phase Bridge Smart Power Module, 20 A 1200 V DIP39, Through Hole.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21576746 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21576746.
Yes. We ship NFAM2012L5BT Internationally to many countries around the world.
This is ON Semiconductor 3 Phase Bridge Smart Power Module 20 A 1200 V DIP39 Through Hole manufactured by onsemi. The manufacturer part number is NFAM2012L5BT. The product is available in through hole configuration. Whereas features a 1200 v of collector emitter voltage (max). It has 6 transistors . The product is available in [Cannel Type] channel. The product has a maximum 20 a continuous collector current . It offers a maximum 15v gate emitter voltage . The package is a sort of dip39. The product is available in 3 phase bridge configuration. It is assigned with possible HTSUS value of 8542.39.0001. The product is rohs3 compliant. Features a 20 a current in A. Moreover, the product comes in 39-powerdip module (1.413", 35.90mm), 30 leads. It comes in igbt configuration. In addition, it is reach unaffected. The product is available in 3 phase configuration. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. 2500vrms of isolation voltage. It carries a 1.2 kv of voltage. Moreover, it corresponds to nfam2012, a base product number of the product. The product is designated with the ear99 code number.
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