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This is manufactured by onsemi. The manufacturer part number is NXH003P120M3F2PTNG. The FET features of the product include silicon carbide (sic). The typical Vgs (th) (max) of the product is 4.4v @ 160ma. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in module. The maximum gate charge and given voltages include 1200nc @ 20v. The product is rohs3 compliant. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 5mohm @ 200a, 18v. The continuous current drain at 25°C is 435a (tj). The product is available in 2 n-channel (half bridge) configuration. It is shipped in tray package . The product has a 1200v drain to source voltage. Its typical moisture sensitivity level is not applicable. The product's input capacitance at maximum includes 20889pf @ 800v. It has a long 11 weeks standard lead time. The product is available in chassis mount configuration. 36-pim (56.7x62.8) is the supplier device package value. The maximum power of the product is 1.48kw (tj). This product use silicon carbide (sic) technology.
For more information please check the datasheets.
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