Fairchild Semiconductor FDS6986AS

FDS6986AS Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
29mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
Current - Continuous Drain (Id) @ 25°C:
6.5A, 7.9A
Configuration:
2 N-Channel (Dual)
Manufacturer:
Fairchild Semiconductor
Drain to Source Voltage (Vdss):
30V
Input Capacitance (Ciss) (Max) @ Vds:
720pF @ 10V
Mounting Type:
Surface Mount
Series:
PowerTrench®, SyncFET™
Supplier Device Package:
8-SOIC
Packaging:
Bulk
Power - Max:
900mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDS69
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDS6986AS. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 29mohm @ 6.5a, 10v. The maximum gate charge and given voltages include 17nc @ 10v. The continuous current drain at 25°C is 6.5a, 7.9a. The product is available in 2 n-channel (dual) configuration. The fairchild semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The product's input capacitance at maximum includes 720pf @ 10v. The product is available in surface mount configuration. The product powertrench®, syncfet™, is a highly preferred choice for users. 8-soic is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 900mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to fds69, a base product number of the product. The product is designated with the ear99 code number.

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