Transistor Type:
NPN
Dimensions:
10.4 x 4.6 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
110 W
Maximum Collector Emitter Voltage:
850 V
Pin Count:
3
Maximum Emitter Base Voltage:
9 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
12 A
Maximum Operating Temperature:
+150 °C
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
12 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
400 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 5A, 5V
edacadModel:
BUL89 Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
5V @ 2.4A, 12A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1037768
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Power - Max:
110 W
Base Product Number:
BUL89
ECCN:
EAR99
