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This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS4112PAN,115. The maximum collector current includes 1a. It is assigned with possible HTSUS value of 0000.00.0000. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufdfn exposed pad. Furthermore, 60 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 120mhz. The 120mv @ 50ma, 500ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 120v. The transistor is a 2 npn (dual) type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. 6-huson (2x2) is the supplier device package value. The maximum power of the product is 510mw. Moreover, it corresponds to pbss4112, a base product number of the product.
For more information please check the datasheets.
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