Maximum Continuous Collector Current:
500 mA
Minimum DC Current Gain:
1000
Transistor Type:
NPN
Dimensions:
23.24 x 7.1 x 3.676mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
2.25 W
Maximum Operating Temperature:
+150 °C
Maximum Collector Emitter Voltage:
50 V
Height:
3.676mm
Width:
7.1mm
Length:
23.24mm
Package Type:
DIP
Number of Elements per Chip:
8
Minimum Operating Temperature:
-20 °C
Maximum Collector Emitter Saturation Voltage:
1.6 V
Base Current:
25mA
Pin Count:
18
Transistor Configuration:
Common Emitter
Current - Collector (Ic) (Max):
500mA
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
50V
Operating Temperature:
-20°C ~ 150°C (TJ)
Package / Case:
18-DIP (0.300", 7.62mm)
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 350mA, 2V
Frequency - Transition:
-
title:
ULN2801A
REACH Status:
REACH Unaffected
edacadModel:
ULN2801A Models
edacadModelUrl:
/en/models/599588
Manufacturer:
STMicroelectronics
Transistor Type:
8 NPN Darlington
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 500µA, 350mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
26 Weeks
Current - Collector Cutoff (Max):
-
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
18-DIP
Packaging:
Tube
Power - Max:
2.25W
Base Product Number:
ULN2801
ECCN:
EAR99
